N-channel MOSFET featuring 200V drain-source breakdown voltage and 3.8A continuous drain current. Offers a low 99.9mΩ drain-source on-resistance at a nominal 5V gate-source voltage. This surface-mount component, housed in a VQFN package, boasts fast switching characteristics with turn-on delay of 7.2ns and fall time of 3.4ns. Operating across a wide temperature range from -55°C to 150°C, it supports up to 3.6W of power dissipation and is RoHS compliant.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5220TR2PBF technical specifications.
General
Package/Case
VQFN
Continuous Drain Current (ID)
3.8A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
99.9mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
99.9MR
Fall Time
3.4ns
Gate to Source Voltage (Vgs)
20V
Height
0.85mm
Input Capacitance
1.38nF
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
99.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
14ns
Turn-On Delay Time
7.2ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5220TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5220TR2PBF to view detailed technical specifications.
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