The IRFHM792TR2PBF is a 2 N-Channel HEXFET MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 2.3W and a continuous drain current of 2.3A. The device features a drain to source breakdown voltage of 100V and a drain to source resistance of 195mR. It is packaged in a surface mount package and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power2.3W
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Technical Specifications
International Rectifier IRFHM792TR2PBF technical specifications.
General
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 195mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 2.6ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 251pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Rds On Max | 195mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 5.2ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFHM792TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHM792TR2PBF to view detailed technical specifications.
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