The IRFHM831TR2PBF is a surface mount N-channel HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 14A and a drain to source breakdown voltage of 30V. The device features a drain to source resistance of 7.8mR and a nominal Vgs of 1.8V. It is available in a VQFN package and is RoHS compliant.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRFHM831TR2PBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 1.05nF |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 7.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 6.2ns |
| Turn-On Delay Time | 6.9ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFHM831TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHM831TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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