The IRFS59N10DTRRP is a HEXFET power MOSFET from International Rectifier with a maximum drain to source voltage of 100V and continuous drain current of 59A. It features a maximum power dissipation of 3.8W and an on-resistance of 25mR. The device is packaged in a TO-263-3 surface mount package and is RoHS compliant. It is suitable for use in a variety of power management applications.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRFS59N10DTRRP technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 59A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 2.45nF |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS59N10DTRRP Datasheet
Download the complete datasheet for International Rectifier IRFS59N10DTRRP to view detailed technical specifications.
No datasheet is available for this part.