The IRFSL4310PBF is a TO-262 packaged N-channel HEXFET power MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 140A and a drain to source breakdown voltage of 100V. The device features a gate to source voltage of 20V and a fall time of 78ns. It is RoHS compliant and has a maximum power dissipation of 300W.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power330W
Quick Jump:
Technical Specifications
International Rectifier IRFSL4310PBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 140A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 78ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 7.67nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 26ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFSL4310PBF Datasheet
Download the complete datasheet for International Rectifier IRFSL4310PBF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
