The IRLHM620TR2PBF is a surface-mount N-CHANNEL HEXFET MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 20V and a continuous drain current of 26A. The device has a maximum power dissipation of 2.7W and is packaged in a VQFN package. The IRLHM620TR2PBF is RoHS compliant and has a nominal gate to source voltage of 800mV.
PackageVQFN
MountingSurface Mount
PolarityN-CHANNEL
Power37W
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Technical Specifications
International Rectifier IRLHM620TR2PBF technical specifications.
General
| Package/Case | VQFN |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 3.62nF |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 37W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 7.5ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLHM620TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRLHM620TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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