PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power6.6W
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Technical Specifications
International Rectifier IRLHS6376TR2PBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 63mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 63MR |
| Fall Time | 9.4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.95mm |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Length | 2.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | 800mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6.6W |
| Radiation Hardening | No |
| Rds On Max | 63mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 4.4ns |
| Width | 2.1mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLHS6376TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRLHS6376TR2PBF to view detailed technical specifications.
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