The IRLR7833TRRPBF is a 140A N-CHANNEL HEXFET power MOSFET packaged in a DPAK surface mount package. It has a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 140W. The device has a drain to source breakdown voltage of 30V and a drain to source resistance of 4.5mR. It also features a nominal Vgs of 2.3V and a gate to source voltage of 20V.
International Rectifier IRLR7833TRRPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 140A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 4.01nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Nominal Vgs | 2.3V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 14ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLR7833TRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
