The IRLR8729TRPBF is a 30V, 58A HEXFET power MOSFET from International Rectifier, packaged in a TO-252-3 surface mount package. It has a maximum power dissipation of 55W and operates over a temperature range of -55°C to 175°C. The device has a drain to source breakdown voltage of 30V and a drain to source resistance of 11.9mR. It also features a fall time of 10ns and a turn-off delay time of 11ns.
PackageTO-252-3
MountingSurface Mount
Power55W
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Technical Specifications
International Rectifier IRLR8729TRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.35nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 55W |
| Radiation Hardening | No |
| Rds On Max | 8.9mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 10ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR8729TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLR8729TRPBF to view detailed technical specifications.
No datasheet is available for this part.