The IRLU8113PBF is a TO-251-3 packaged N-channel HEXFET power MOSFET with a maximum drain current of 94A and a maximum drain to source breakdown voltage of 30V. It has a maximum power dissipation of 89W and operates over a temperature range of -55°C to 175°C. The device is RoHS compliant and has a nominal threshold voltage of 2.25V.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRLU8113PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 94A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.1mm |
| Input Capacitance | 2.92nF |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Through Hole |
| Nominal Vgs | 2.25V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2.25V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9.2ns |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLU8113PBF Datasheet
Download the complete datasheet for International Rectifier IRLU8113PBF to view detailed technical specifications.
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