The APT1001RBVFRG is a high-power MOSFET from Ixys, packaged in a TO-247-3 case and designed for through-hole mounting. It features a maximum drain-to-source voltage of 1kV and a continuous drain current of 12.5A. The device is capable of withstanding a maximum power dissipation of 300W. It has an input capacitance of 4nF and a maximum on-resistance of 900mR. The APT1001RBVFRG is available in rail or tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys APT1001RBVFRG technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Voltage (Vdss) | 1kV |
| Input Capacitance | 4nF |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 900mR |
| Series | HiPerFET™ |
Compliance
| RoHS | Not Compliant |
Datasheet
Ixys APT1001RBVFRG Datasheet
Download the complete datasheet for Ixys APT1001RBVFRG to view detailed technical specifications.
No datasheet is available for this part.