Ixys
FII30-06D
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5
MountingThrough Hole
Power100W
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Technical Specifications
Ixys FII30-06D technical specifications.
General
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.4V
Height
20.88mm
Input
Standard
Input Capacitance
1.1nF
Lead Free
Lead Free
Length
19.91mm
Max Collector Current
30A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
NTC Thermistor
No
Package Quantity
24
Packaging
Rail/Tube
Power Dissipation
100W
RoHS Compliant
Yes
Turn-Off Delay Time
300ns
Turn-On Delay Time
50ns
Width
5.03mm
Compliance
RoHS
Compliant
Datasheet
Ixys FII30-06D Datasheet
Download the complete datasheet for Ixys FII30-06D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.