The IXFH60N20F is a high-power N-channel power MOSFET from Ixys, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 60A and a drain to source breakdown voltage of 200V. The device is packaged in a TO-247AD package and is RoHS compliant. The IXFH60N20F is suitable for high-power applications requiring a high current and voltage handling capability.
PackageTO-247AD
PolarityN-CHANNEL
Power315W
Quick Jump:
Technical Specifications
Ixys IXFH60N20F technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 38mR |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 315W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFH60N20F Datasheet
Download the complete datasheet for Ixys IXFH60N20F to view detailed technical specifications.
No datasheet is available for this part.