The IXFR12N100F is an N-channel power MOSFET from Ixys with a drain to source breakdown voltage of 1kV and a continuous drain current of 10A. It has a drain to source resistance of 1.05 ohms and a power dissipation of 250W. The device is packaged in a rail/tube format and is RoHS compliant. It operates over a temperature range of -40°C to 150°C and has a fall time of 12ns and turn-off delay time of 31ns.
PolarityN-CHANNEL
Power250W
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Technical Specifications
Ixys IXFR12N100F technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.05R |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFR12N100F Datasheet
Download the complete datasheet for Ixys IXFR12N100F to view detailed technical specifications.
No datasheet is available for this part.