IXTA16N50P

500V 16A N-Channel MOSFET, 400mR Rds(on), TO-263

N-Channel Power MOSFET, 500V Vds, 16A Continuous Drain Current (ID), and 400mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-263 surface mount package, 300W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 30V Gate to Source Voltage (Vgs) and 2.25nF input capacitance. Turn-off delay time is 70ns with a fall time of 25ns.

PackageTO-263

Current Rating16A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Ixys IXTA16N50P technical specifications.

General

Package/Case	TO-263
Continuous Drain Current (ID)	16A
Current Rating	16A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	400mR
Drain to Source Voltage (Vdss)	500V
Fall Time	25ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	2.25nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Surface Mount
Number of Elements	1
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Radiation Hardening	No
Rds On Max	400mR
RoHS Compliant	Yes
Series	PolarHV™
Turn-Off Delay Time	70ns
DC Rated Voltage	500V