IXTA50N20P

Power Field-Effect Transistor, 50A I(D), 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power360W

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Ixys IXTA50N20P technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	50A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	60mR
Drain to Source Voltage (Vdss)	200V
Fall Time	30ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	2.72nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	360W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	360W
Rds On Max	60mR
RoHS Compliant	Yes
Series	PolarHT™
Turn-Off Delay Time	70ns