The IXTY1R6N50D2-TRL is an N-channel depletion-mode power MOSFET designed for high-voltage applications. Unlike standard enhancement-mode devices, this depletion-mode transistor is 'normally-on' at zero gate voltage. It features a drain-to-source voltage of 500V, a continuous drain current of 1.6A, and a low maximum on-resistance of 2.3 Ohms. It is commonly used in constant current sources, surge protection, and power supply start-up circuits.
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| Drain-Source Breakdown Voltage (Vdss) | 500V |
| Continuous Drain Current (Id) | 1.6A |
| Drain-Source On-State Resistance (Rds On) Max | 2.3Ohms |
| Gate-Source Threshold Voltage (Vgs th) | -2.0 to -4.5V |
| Power Dissipation (Pd) | 80W |
| Operating Temperature Range | -55 to +150C |
| RoHS | Compliant |
| ECCN | EAR99 |
