The MIO1200-25E10 transistor from Ixys features a collector-emitter breakdown voltage of 2.5kV and a maximum collector current of 1.2kA. It has a standard input and a maximum operating temperature of 125°C, with a minimum operating temperature of -40°C. The device is packaged in a single unit in a box and is RoHS compliant. The transistor has an input capacitance of 186nF and a collector-emitter voltage maximum of 2.5V.
PackageE
MountingChassis Mount
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Technical Specifications
Ixys MIO1200-25E10 technical specifications.
General
| Package/Case | E |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Collector-emitter Voltage-Max | 2.5V |
| Input | Standard |
| Input Capacitance | 186nF |
| Max Collector Current | 1.2kA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Chassis Mount |
| NTC Thermistor | No |
| Package Quantity | 1 |
| Packaging | Box |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys MIO1200-25E10 Datasheet
Download the complete datasheet for Ixys MIO1200-25E10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.