The Ixys MWI35-12A7 is a high-power transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 62A. It has a maximum power dissipation of 280W and is packaged in an E-case with a through-hole mount. The transistor operates within a temperature range of -40°C to 150°C and is compliant with lead-free standards. The device features a turn-on delay time of 100ns and a turn-off delay time of 500ns.
PackageE
MountingChassis Mount, Through Hole
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Technical Specifications
Ixys MWI35-12A7 technical specifications.
General
| Package/Case | E |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.8V |
| Input | Standard |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Max Collector Current | 62A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 280W |
| Mount | Chassis Mount, Through Hole |
| NTC Thermistor | No |
| Package Quantity | 6 |
| Packaging | Box |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 500ns |
| Turn-On Delay Time | 100ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys MWI35-12A7 Datasheet
Download the complete datasheet for Ixys MWI35-12A7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.