The Ixys STB18N55M5 is a high-power MOSFET with a maximum drain-to-source voltage of 100V and continuous drain current of 180A. It features a TO-220-3 package with through-hole mounting and a maximum power dissipation of 480W. The device has an input capacitance of 10.5nF and a maximum on-resistance of 6mR. It is available in rail or tube packaging and is part of the TrenchT2 HiPerFET series.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Ixys STB18N55M5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 10.5nF |
| Max Power Dissipation | 480W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 6mR |
| Series | TrenchT2™ HiPerFET™ |
Compliance
| RoHS | Not Compliant |
Datasheet
Ixys STB18N55M5 Datasheet
Download the complete datasheet for Ixys STB18N55M5 to view detailed technical specifications.
No datasheet is available for this part.