N-channel trench MOSFET provides 100 V drain-to-source voltage capability and 180 A continuous drain current at case temperature. The device has a maximum on-resistance of 6.4 mΩ at 25 A with 10 V gate drive. It supports ±30 V maximum gate-to-source voltage and a 4.5 V maximum gate threshold at 250 µA. Through-hole TO-220-3 packaging supports high-power mounting, with 480 W maximum power dissipation at case temperature. The operating junction temperature range is -55 °C to 175 °C.
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| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage | 100V |
| Continuous Drain Current at 25°C | 180A |
| Rds On Maximum | 6.4 @ 25 A, 10 VmΩ |
| Gate Threshold Voltage Maximum | 4.5 @ 250 µAV |
| Gate to Source Voltage Maximum | ±30V |
| Gate Charge Maximum | 151 @ 10 VnC |
| Input Capacitance Maximum | 6900 @ 25 VpF |
| Power Dissipation Maximum | 480 (Tc)W |
| Operating Junction Temperature | -55 to 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Drive Voltage | 10V |
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