The MCAC90N10Y-TP is an N-Channel enhancement mode MOSFET utilizing advanced split gate trench technology. It features high density cell design for ultra low Rdson, excellent stability, and high power and current handling capability in a compact DFN5060 package.
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Technical Specifications
Micro Commercial Components MCAC90N10Y-TP technical specifications.
General
| Drain-Source Breakdown Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 90A |
| Drain-Source On-Resistance (Rds(on)) | 5.6mΩ |
| Power Dissipation (Pd) | 170W |
| Gate-Source Threshold Voltage (Vgs(th)) | 3.0V |
| Operating Junction Temperature | -55 to +175°C |
Compliance
| RoHS | Compliant |
| Halogen Free | Yes |
Datasheet
Micro Commercial Components MCAC90N10Y-TP Datasheet
Download the complete datasheet for Micro Commercial Components MCAC90N10Y-TP to view detailed technical specifications.
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