The MCACD6D3N03L-TP is a high-performance Dual N-Channel enhancement mode MOSFET utilizing advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
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Technical Specifications
Micro Commercial Components MCACD6D3N06Y-TP technical specifications.
General
| Drain-Source Voltage (Vds) | 60V |
| Continuous Drain Current (Id) | 50A |
| Drain-Source On-Resistance (Rds On) Max @ 10V | 6.3mOhms |
| Gate-Source Threshold Voltage (Vgs th) | 1.0 to 2.5V |
| Total Gate Charge (Qg) @ 10V | 35nC |
| Power Dissipation (Pd) | 48W |
| Operating Junction Temperature | -55 to +150°C |
| Number of Channels | 2 (Dual)Channels |
| Input Capacitance (Ciss) | 2450pF |
Compliance
| RoHS | Compliant |
| Halogen Free | Yes |
| Flammability Rating | UL 94 V-0 |
| Epoxy | Meets UL 94 V-0 |
Datasheet
Micro Commercial Components MCACD6D3N06Y-TP Datasheet
Download the complete datasheet for Micro Commercial Components MCACD6D3N06Y-TP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.