The DN2530N3-P002 is a N-CHANNEL MOSFET with a Drain to Source Breakdown Voltage of 300V and a Continuous Drain Current of 175mA. It features a Power Dissipation of 740mW and a Drain to Source Resistance of 12 ohms. The device operates within a temperature range of -55°C to 150°C and is packaged in a TO-92 case, available in quantities of 2000 per reel.
PackageTO-92
Resistance12R
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Microchip DN2530N3-P002 technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 175mA |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 12R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 740mW |
| Resistance | 12R |
| Turn-Off Delay Time | 15ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Microchip DN2530N3-P002 Datasheet
Download the complete datasheet for Microchip DN2530N3-P002 to view detailed technical specifications.
No datasheet is available for this part.