The DN2535N3-G P014 is a single N-channel MOSFET with a drain to source breakdown voltage of 350V and a continuous drain current of 120mA. It is packaged in a TO-92-3 package, suitable for surface mount applications. The device is rated for operation over a wide temperature range, and meets the requirements of standard manufacturing processes.
PackageTO-92-3
PolarityN-CHANNEL
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Technical Specifications
Microchip DN2535N3-G P014 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Breakdown Voltage | 350V |
| Drain to Source Resistance | 25R |
| Drain to Source Voltage (Vdss) | 350V |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Weight | 0.016oz |
Compliance
| RoHS | Not Compliant |
Datasheet
Microchip DN2535N3-G P014 Datasheet
Download the complete datasheet for Microchip DN2535N3-G P014 to view detailed technical specifications.
No datasheet is available for this part.