The DN2540N3-G P002 is an N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a drain to source breakdown voltage of 400V and a continuous drain current of 120mA. The device is packaged in a TO-92-3 package, which is a small, three-pin package. The MOSFET has a maximum power dissipation of 1W and a gate to source voltage of 20V. It is not RoHS compliant.
PackageTO-92-3
PolarityN-CHANNEL
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Technical Specifications
Microchip DN2540N3-G P002 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 25R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.016oz |
| Width | 4.19mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Microchip DN2540N3-G P002 Datasheet
Download the complete datasheet for Microchip DN2540N3-G P002 to view detailed technical specifications.
No datasheet is available for this part.