The LND150N3-P013 is a TO-92 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 30mA and a drain to source breakdown voltage of 500V. The device can dissipate up to 740mW of power and has a gate to source voltage of 20V. The LND150N3-P013 is available in tape and reel packaging with a quantity of 2000 units per package.
PackageTO-92
Resistance1000R
PolarityN-CHANNEL
Power740mW
Quick Jump:
Technical Specifications
Microchip LND150N3-P013 technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 30mA |
| Drain to Source Breakdown Voltage | 500V |
| Fall Time | 450ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 740mW |
| Resistance | 1000R |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Microchip LND150N3-P013 Datasheet
Download the complete datasheet for Microchip LND150N3-P013 to view detailed technical specifications.
No datasheet is available for this part.