P-channel JFET with 500mA continuous drain current and -16.5V drain-to-source breakdown voltage. Features 1.5Ω drain-to-source resistance (Rds On Max) and 10V gate-to-source voltage. Operates across a -55°C to 150°C temperature range with 1W maximum power dissipation. Packaged in a TO-92 through-hole mount, suitable for bulk packaging. Includes 250pF input capacitance and 20ns turn-on delay.
PackageTO-92
MountingThrough Hole
PolarityP-CHANNEL
Power1W
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Technical Specifications
Microchip LP0701N3-G technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
500mA
Drain to Source Breakdown Voltage
-16.5V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
16.5V
Fall Time
30ns
Gate to Source Voltage (Vgs)
10V
Height
5.33mm
Input Capacitance
250pF
Length
5.21mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
P-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
1.5R
Turn-Off Delay Time
30ns
Turn-On Delay Time
20ns
Weight
0.016oz
Width
4.19mm
Compliance
RoHS
Compliant
Datasheet
Microchip LP0701N3-G Datasheet
Download the complete datasheet for Microchip LP0701N3-G to view detailed technical specifications.
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