The TN2106N3-GP003 is a single N-channel MOSFET from Microchip with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 740mW and a continuous drain current of 300mA. The device has a drain to source breakdown voltage of 60V and a drain to source resistance of 5R. It is packaged in a TO-92-3 package and is available in quantities of 2000 on tape and reel.
PackageTO-92-3
PolarityN-CHANNEL
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Technical Specifications
Microchip TN2106N3-GP003 technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Length | 5.21mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 740mW |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 3ns |
| Weight | 0.016oz |
| Width | 4.19mm |
Compliance
| RoHS | Compliant |
Datasheet
Microchip TN2106N3-GP003 Datasheet
Download the complete datasheet for Microchip TN2106N3-GP003 to view detailed technical specifications.
No datasheet is available for this part.