The TN2106N3-P003 is a TO-92 packaged N-channel MOSFET with a drain to source breakdown voltage of 60V and a continuous drain current of 300mA. It features a drain to source resistance of 2.5 ohms and a power dissipation of 740mW. The device operates over a temperature range of -55°C to 150°C and is available in tape and reel packaging with 2000 units per package.
PackageTO-92
Resistance2.5R
PolarityN-CHANNEL
Power740mW
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Technical Specifications
Microchip TN2106N3-P003 technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.5R |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 740mW |
| Resistance | 2.5R |
| Turn-Off Delay Time | 6ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Microchip TN2106N3-P003 Datasheet
Download the complete datasheet for Microchip TN2106N3-P003 to view detailed technical specifications.
No datasheet is available for this part.