The VN1206L-P002-G is an N-channel MOSFET with a drain to source breakdown voltage of 120V and a continuous drain current of 230mA. It features a drain to source resistance of 6 ohms and a power dissipation of 1W. The device is packaged in a TO-92 package and is available in quantities of 2000 on tape and reel. The MOSFET operates over a temperature range of -55°C to 150°C.
PackageTO-92
Resistance6R
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip VN1206L-P002-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 230mA |
| Drain to Source Breakdown Voltage | 120V |
| Drain to Source Resistance | 6R |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Resistance | 6R |
| Turn-Off Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Microchip VN1206L-P002-G Datasheet
Download the complete datasheet for Microchip VN1206L-P002-G to view detailed technical specifications.
No datasheet is available for this part.