The VN2210N3-P002 is a TO-92 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It can handle a continuous drain current of 300mA and a drain to source breakdown voltage of 100V. The device has a drain to source resistance of 4R and a gate to source voltage of 20V. It is rated for a power dissipation of 1W and has a turn-off delay time of 50ns.
PackageTO-92
Resistance0.35R
PolarityN-CHANNEL
Power1W
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Technical Specifications
Microchip VN2210N3-P002 technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 4R |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Resistance | 0.35R |
| Turn-Off Delay Time | 50ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Microchip VN2210N3-P002 Datasheet
Download the complete datasheet for Microchip VN2210N3-P002 to view detailed technical specifications.
No datasheet is available for this part.