The VP2106N3-P002-G is a P-channel MOSFET with a maximum drain to source breakdown voltage of -60V and continuous drain current of -250mA. It has a power dissipation of 740mW and a drain to source resistance of 12 ohms. The device is packaged in a TO-92 package and is available in quantities of 2000 on tape and reel. The operating temperature range is not specified.
PackageTO-92
Resistance12R
PolarityP-CHANNEL
Power740mW
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Technical Specifications
Microchip VP2106N3-P002-G technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | -250mA |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 12R |
| Gate to Source Voltage (Vgs) | 20V |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 740mW |
| Resistance | 12R |
Compliance
| RoHS | Compliant |
Datasheet
Microchip VP2106N3-P002-G Datasheet
Download the complete datasheet for Microchip VP2106N3-P002-G to view detailed technical specifications.
No datasheet is available for this part.