256Mbyte DDR SDRAM DRAM Module, 200-pin SODIMM. Features a 333 MHz maximum clock rate and 0.7 ns maximum access time. Operates with a 2.5V typical supply voltage, ranging from 2.3V to 2.7V. This unbuffered small outline dual in-line memory module utilizes 256M bit TSOP chips, organized as 32Mx64 with 8 chips per module (32Mx8 configuration). Designed for socket mounting with a non-lead-frame SMT basic package type, it offers a 64-bit data bus width and a CAS latency of 2.5. Operating temperature range is -40°C to 85°C.
PackageUSODIMM
MountingSocket
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Technical Specifications
Microchip W3EG6432S335D4I technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DIM
Package/Case
USODIMM
Package Description
Unbuffered Small Outline Dual In Line Memory Module
Lead Shape
No Lead
Pin Count
200
PCB
200
Package Length (mm)
67.56(Max)
Package Width (mm)
3.81(Max)
Package Height (mm)
31.75
Mounting
Socket
Main Category
DRAM Module
Total Density
256Mbyte
Module Type
200SODIMM
Maximum Access Time
0.7ns
Maximum Clock Rate
333MHz
Chip Density
256Mbit
Subcategory
DDR SDRAM
Data Bus Width
64bit
Number of Chip per Module
8
Organization
32Mx64
Chip Package Type
TSOP
Typical Operating Supply Voltage
2.5V
Maximum Operating Current
3280mA
Min Operating Supply Voltage
2.3V
Max Operating Supply Voltage
2.7V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Chip Configuration
32Mx8
ECC Support
No
CAS Latency
2.5
Compliance
Cage Code
60991
EU RoHS
No
HTS Code
8473301140
Schedule B
8473300002
ECCN
4A994.a
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Microchip W3EG6432S335D4I Datasheet
Download the complete datasheet for Microchip W3EG6432S335D4I to view detailed technical specifications.
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