512Mbyte DDR SDRAM DRAM Module, 200-pin USODIMM form factor, operating at 333 MHz with a 64-bit data bus width. Features dual ranks and a CAS latency of 2.5, with a maximum access time of 0.7 ns. This unbuffered memory module utilizes TSOP chip packaging and operates from a 2.3V to 2.7V supply voltage, with a typical operating voltage of 2.5V. Designed for socket mounting, it offers a wide operating temperature range of -40°C to 85°C.
PackageUSODIMM
MountingSocket
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Technical Specifications
Microchip WV3EG232M64STSU335D4ISG technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DIM
Package/Case
USODIMM
Package Description
Unbuffered Small Outline Dual In Line Memory Module
Lead Shape
No Lead
Pin Count
200
PCB
200
Package Length (mm)
67.75(Max)
Package Width (mm)
3.8(Max)
Package Height (mm)
31.9(Max)
Mounting
Socket
Main Category
DRAM Module
Total Density
512Mbyte
Module Type
200SODIMM
Maximum Access Time
0.7ns
Maximum Clock Rate
333MHz
Chip Density
512Mbit
Subcategory
DDR SDRAM
Data Bus Width
64bit
Number of Chip per Module
8
Organization
32Mx64x2
Chip Package Type
TSOP
Typical Operating Supply Voltage
2.5V
Maximum Operating Current
3040mA
Min Operating Supply Voltage
2.3V
Max Operating Supply Voltage
2.7V
Min Operating Temperature
-40°C
Max Operating Temperature
85°C
Chip Configuration
32Mx16
ECC Support
No
Number of Ranks
Dual
CAS Latency
2.5
Compliance
Cage Code
60991
EU RoHS
Yes
HTS Code
8473301140
Schedule B
8473300002
ECCN
4A994.a
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Microchip WV3EG232M64STSU335D4ISG Datasheet
Download the complete datasheet for Microchip WV3EG232M64STSU335D4ISG to view detailed technical specifications.
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