64M-bit NOR Flash memory with a parallel interface, organized as 4M x 16 words. Features an 80ns maximum access time and a 3.3V typical operating supply voltage. Housed in a 48-pin TFBGA package with a 0.75mm pin pitch, this surface-mount component offers asymmetrical block organization and a top boot block. Operating current is 20mA, with programming voltages ranging from 1.65-3.6V and 11.4-12.6V. Suitable for operation between 0°C and 70°C.
PackageTFBGA
MountingSurface Mount
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Technical Specifications
Micron M28W640CT80ZB1T technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
TFBGA
Package Description
Thin Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
48
PCB
48
Package Length (mm)
10.5
Package Width (mm)
6.39
Package Height (mm)
1(Max)
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
0.75
Package Material
Plastic
Mounting
Surface Mount
Density
64Mbit
Interface Type
Parallel
Maximum Operating Current
20mA
Block Organization
Asymmetrical
Architecture
Sectored
Programming Voltage
1.65 to 3.6|11.4 to 12.6V
Timing Type
Asynchronous
Maximum Access Time
80ns
Number of Words
4M
Boot Block
Yes
Typical Operating Supply Voltage
3.3V
Address Bus Width
22bit
Location of Boot Block
Top
Number of Bits per Word
16bit
Min Operating Temperature
0°C
Max Operating Temperature
70°C
Compliance
Cage Code
6Y440
HTS Code
8542320071
Schedule B
8542320070
ECCN
3A991.b.1.a
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Micron M28W640CT80ZB1T Datasheet
Download the complete datasheet for Micron M28W640CT80ZB1T to view detailed technical specifications.
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