1M-bit NOR Flash memory with parallel interface, featuring 120ns maximum access time. This integrated circuit offers asymmetrical block organization and sectored architecture, supporting 8/16 bits per word with 128K/64K word counts. Designed for surface mounting, it utilizes a 48-pin TSOP package with gull-wing leads and operates from a 4.5 to 5.5V programming voltage. Suitable for a wide temperature range of -40°C to 85°C.
Micron M29F100T120N6R technical specifications.
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