The 4N22AJANTX is a single bipolar transistor from Micropac with a collector emitter saturation voltage of 300mV and a collector emitter voltage of 40V. It can handle a forward current of 40mA and has a power dissipation of 300mW. The device is rated for operation between -55°C and 125°C and is available in a through hole package.
MountingThrough Hole
Power300mW
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Technical Specifications
Micropac 4N22AJANTX technical specifications.
General
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Fall Time | 15000ns |
| Forward Current | 40mA |
| Input Type | DC |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 300mW |
| Reverse Breakdown Voltage | 2V |
Compliance
| RoHS | Not Compliant |
Datasheet
Micropac 4N22AJANTX Datasheet
Download the complete datasheet for Micropac 4N22AJANTX to view detailed technical specifications.
No datasheet is available for this part.