The 1N4153-1JANTXV is a DO-35 packaged diode with a forward current rating of 150mA and an operating temperature range of -65°C to 175°C. It is designed for through hole mounting and features a maximum reverse current of 50nA. The device can withstand a maximum repetitive reverse voltage of 50V and a peak non-repetitive surge current of 2A. The 1N4153-1JANTXV is not radiation hardened.
PackageDO-35
MountingThrough Hole
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Technical Specifications
Microsemi 1N4153-1JANTXV technical specifications.
General
| Package/Case | DO-35 |
| Forward Current | 150mA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 50V |
| Max Reverse Current | 50nA |
| Mount | Through Hole |
| Peak Non-Repetitive Surge Current | 2A |
| Radiation Hardening | No |
| Reverse Recovery Time | 4ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi 1N4153-1JANTXV Datasheet
Download the complete datasheet for Microsemi 1N4153-1JANTXV to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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