The 1N5551 is a diode with an average rectified current of 3A and a maximum reverse voltage of 400V. It is packaged in an axial case and mounted through a hole. The diode can operate between -65°C and 200°C. It is not RoHS compliant and is radiation hardened.
PackageAxial
MountingThrough Hole
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Technical Specifications
Microsemi 1N5551 technical specifications.
General
| Average Rectified Current | 3A |
| Package/Case | Axial |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Reverse Voltage (DC) | 400V |
| Mount | Through Hole |
| Peak Non-Repetitive Surge Current | 100A |
| Radiation Hardening | Yes |
| Reverse Recovery Time | 2us |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantYes |
Datasheet
Microsemi 1N5551 Datasheet
Download the complete datasheet for Microsemi 1N5551 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.