
The 1N5654AJANTXV is a unidirectional diode from Microsemi, packaged in a DO-13 through-hole package. It features a reverse breakdown voltage of 71.3V and a peak pulse power of 1.5kW. The diode can operate over a temperature range of -65°C to 175°C and has a leakage current of 5nA. It is also radiation hardened.
Microsemi 1N5654AJANTXV technical specifications.
| Package/Case | DO-13 |
| Clamping Voltage | 103V |
| Leakage Current | 5nA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Peak Pulse Current | 14.6A |
| Peak Pulse Power | 1.5kW |
| Polarity | Unidirectional |
| Radiation Hardening | Yes |
| Reverse Breakdown Voltage | 71.3V |
| Reverse Standoff Voltage | 64.1V |
| RoHS | Not CompliantYes |
Download the complete datasheet for Microsemi 1N5654AJANTXV to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.