The 1N5814HCE is a diode with a maximum repetitive reverse voltage of 100V and a forward current of 20A. It has a reverse recovery time of 35ns and a peak non-repetitive surge current of 400A. The device is packaged in a bulk format and is not radiation hardened. It is not RoHS compliant.
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Technical Specifications
Microsemi 1N5814HCE technical specifications.
General
| Package/Case | DIE |
| Forward Current | 20A |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Max Reverse Current | 10uA |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 400A |
| Radiation Hardening | No |
| Reverse Recovery Time | 35ns |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi 1N5814HCE Datasheet
Download the complete datasheet for Microsemi 1N5814HCE to view detailed technical specifications.
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