The 1N5907E3TR is a unidirectional diode from Microsemi, packaged in a DO-13 case suitable for through-hole mounting. It features a reverse breakdown voltage of 6V and a clamping voltage of 8.5V. The diode can withstand a peak pulse current of 120A and a peak pulse power of 1.5kW. It operates over a temperature range of -65°C to 175°C and is radiation hardened.
PackageDO-13
MountingThrough Hole
PolarityUnidirectional
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Technical Specifications
Microsemi 1N5907E3TR technical specifications.
General
| Package/Case | DO-13 |
| Clamping Voltage | 8.5V |
| Leakage Current | 300nA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Peak Pulse Current | 120A |
| Peak Pulse Power | 1.5kW |
| Polarity | Unidirectional |
| Radiation Hardening | Yes |
| Reverse Breakdown Voltage | 6V |
| Reverse Standoff Voltage | 5V |
Compliance
| RoHS | Not CompliantYes |
Datasheet
Microsemi 1N5907E3TR Datasheet
Download the complete datasheet for Microsemi 1N5907E3TR to view detailed technical specifications.
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