The 1N6101JANTX diode from Microsemi is a through-hole packaged device with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It can handle a maximum repetitive reverse voltage of 75V and a peak non-repetitive surge current of 500mA. The diode has a forward current rating of 300mA and a reverse recovery time of 10ns.
PackageCDIP
MountingThrough Hole
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Technical Specifications
Microsemi 1N6101JANTX technical specifications.
General
| Package/Case | CDIP |
| Forward Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 75V |
| Mount | Through Hole |
| Peak Non-Repetitive Surge Current | 500mA |
| Radiation Hardening | No |
| Reverse Recovery Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi 1N6101JANTX Datasheet
Download the complete datasheet for Microsemi 1N6101JANTX to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.