The 1N6281AE3/TR13 diode from Microsemi is a unidirectional device with a minimum breakdown voltage of 25.7V. It can withstand a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. The diode has a maximum reverse leakage current of 1uA and is available in a through-hole package. It is RoHS compliant and suitable for use in applications where radiation hardening is not required.
MountingThrough Hole
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Technical Specifications
Microsemi 1N6281AE3/TR13 technical specifications.
General
| Direction | Unidirectional |
| Min Breakdown Voltage | 25.7V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Reverse Leakage Current | 1uA |
| Mount | Through Hole |
| Packaging | Tape and Reel |
| Peak Pulse Current | 40A |
| Peak Pulse Power | 1.5kW |
| Radiation Hardening | No |
| Reverse Standoff Voltage | 23.1V |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi 1N6281AE3/TR13 Datasheet
Download the complete datasheet for Microsemi 1N6281AE3/TR13 to view detailed technical specifications.
No datasheet is available for this part.