The 1N6283AHE3/TR12 is a unidirectional diode with a reverse breakdown voltage of 31.4V and a peak pulse current of 33A. It can withstand a maximum operating temperature of 150°C and a peak pulse power of 1.5kW. The diode is packaged in a through-hole configuration and has a leakage current of 5uA. It is suitable for use in high-temperature applications and has a clamping voltage of 45.7V.
MountingThrough Hole
PolarityUnidirectional
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Technical Specifications
Microsemi 1N6283AHE3/TR12 technical specifications.
General
| Clamping Voltage | 45.7V |
| Leakage Current | 5uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Peak Pulse Current | 33A |
| Peak Pulse Power | 1.5kW |
| Polarity | Unidirectional |
| Reverse Breakdown Voltage | 31.4V |
| Reverse Standoff Voltage | 28.2V |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi 1N6283AHE3/TR12 Datasheet
Download the complete datasheet for Microsemi 1N6283AHE3/TR12 to view detailed technical specifications.
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