The 1N6462USJANTXV diode is a unidirectional device with a reverse breakdown voltage of 6.5V and a peak pulse current of 258A. It can withstand a peak pulse power of 500W and has a clamping voltage of 11V. The diode is available in a MELF package and is designed for surface mount applications. It operates over a temperature range of -55°C to 175°C.
PackageMELF
MountingSurface Mount
PolarityUnidirectional
Quick Jump:
Technical Specifications
Microsemi 1N6462USJANTXV technical specifications.
General
| Package/Case | MELF |
| Clamping Voltage | 11V |
| Leakage Current | 2.5mA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Peak Pulse Current | 258A |
| Peak Pulse Power | 500W |
| Polarity | Unidirectional |
| Reverse Breakdown Voltage | 6.5V |
| Reverse Standoff Voltage | 6V |
Compliance
| RoHS | Not Compliant |
Datasheet
Microsemi 1N6462USJANTXV Datasheet
Download the complete datasheet for Microsemi 1N6462USJANTXV to view detailed technical specifications.
No datasheet is available for this part.