The 1N6464JAN is a unidirectional Zener diode with a reverse breakdown voltage of 16.4V and a peak pulse power of 500W. It operates over a temperature range of -55°C to 175°C and features a leakage current of 500uA. This diode is designed for through hole mounting and is radiation hardened.
MountingThrough Hole
PolarityUnidirectional
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Technical Specifications
Microsemi 1N6464JAN technical specifications.
General
| Clamping Voltage | 26.5V |
| Leakage Current | 500uA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Peak Pulse Current | 107A |
| Peak Pulse Power | 500W |
| Polarity | Unidirectional |
| Radiation Hardening | Yes |
| Reverse Breakdown Voltage | 16.4V |
| Reverse Standoff Voltage | 15V |
Compliance
| RoHS | Not CompliantYes |
Datasheet
Microsemi 1N6464JAN Datasheet
Download the complete datasheet for Microsemi 1N6464JAN to view detailed technical specifications.
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