The 1N6506 diode is a through-hole packaged device with a maximum operating temperature range of -65°C to 150°C. It features a maximum repetitive reverse voltage of 60V and a maximum reverse current of 100nA. The diode has a maximum forward current of 300mA and a peak non-repetitive surge current of 500mA. The 1N6506 is not radiation hardened and is not RoHS compliant.
PackageCDIP
MountingThrough Hole
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Technical Specifications
Microsemi 1N6506 technical specifications.
General
| Package/Case | CDIP |
| Forward Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 60V |
| Max Reverse Current | 100nA |
| Mount | Through Hole |
| Number of Unidirectional Channels | 8 |
| Packaging | Bulk |
| Peak Non-Repetitive Surge Current | 500mA |
| Power Line Protection | No |
| Radiation Hardening | No |
| Reverse Recovery Time | 20ns |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Microsemi 1N6506 Datasheet
Download the complete datasheet for Microsemi 1N6506 to view detailed technical specifications.
No datasheet is available for this part.