The 1N6509JANTX diode from Microsemi is a through-hole device with a CDIP package, suitable for operating temperatures between -65°C and 150°C. It can handle a maximum forward current of 300mA and a peak non-repetitive surge current of 500mA. The diode has a maximum repetitive reverse voltage of 60V and a reverse recovery time of 20ns.
PackageCDIP
MountingThrough Hole
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Technical Specifications
Microsemi 1N6509JANTX technical specifications.
General
| Package/Case | CDIP |
| Forward Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 60V |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Peak Non-Repetitive Surge Current | 500mA |
| Radiation Hardening | No |
| Reverse Recovery Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Microsemi 1N6509JANTX Datasheet
Download the complete datasheet for Microsemi 1N6509JANTX to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.